Hope College Department of Physics and Engineering
Research Experiences for Undergraduates
Measuring Drift Mobility of Scandium Nitride Using Haynes-Shockley Experiment
Matt E. Koepke
|Student's Home Institution:||West Virginia|
|Research Advisor:||Dr. Mark Little|
|Source of Support:||NSF-REU, Research Corporation|
Scandium Nitride (ScN) films have been grown on ITO covered quartz substrates by reactive dc-magnetron sputtering (in a pure nitrogen atmosphere) at room temperature for approximately four hours. Hole mobility was measured using an optically injected time-of-flight technique utilizing sandwich geometry and 800 ps pulses of 481 nm laser light. Minority mobility was found to be ~ 5.0 * 10 ? ³ cm²/V.s.